发明名称 |
Festkörperbildsensor und Herstellungsverfahren |
摘要 |
<p>A solid-state image sensor comprises a semiconductor substrate of a first conductivity type having a color pixel region (10a) and a black pixel region (10b) ; a first well of the first conductivity type formed in the color pixel region (10a); a second well of the first conductivity type formed in the black pixel region (10b) ; a third well of a second conductivity type formed, surrounding the second well and isolating the second well from the rest region of the semiconductor substrate; a color pixel formed in the first well in the color pixel region (10a) and including a first photodiode and a first read transistor for reading a signal generated by the first photodiode; and a black pixel formed in the second well in the black pixel region and including a second photodiode and a second read transistor for reading a signal generated by the second photodiode. The first well includes a first buried impurity doped layer of the first conductivity type formed in a bottom thereof in a region where the first read transistor is formed. The second well includes a second buried impurity doped layer of the first conductivity type formed in a bottom thereof in a region where the second photodiode is formed and a region where the second read transistor is formed.</p> |
申请公布号 |
DE602004028716(D1) |
申请公布日期 |
2010.09.30 |
申请号 |
DE20046028716T |
申请日期 |
2004.11.30 |
申请人 |
FUJITSU SEMICONDUCTOR LTD. |
发明人 |
OHKAWA, NARUMI |
分类号 |
H01L27/146;H04N5/335;H04N5/361;H04N5/369;H04N5/374 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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