发明名称 |
METHOD OF CHEMICAL MECHANICAL POLISHING |
摘要 |
PURPOSE: A chemical and mechanical polishing method is provided to protect a wafer material or an under-layer film from being damaged by reducing shear stress applied to a semiconductor. CONSTITUTION: A semiconductor wafer(10) rotates the same direction as the rotation direction of a carrier(34). A polishing pad(30) is attached on a rotary table(32). The diameter of the rotary table is larger than that of the semiconductor wafer. A backing film detachably fixes the semiconductor wafer to the carrier. The rotary speed ratio of the semiconductor wafer and the polishing pad is more than or equal to 2:1.
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申请公布号 |
KR20100105823(A) |
申请公布日期 |
2010.09.30 |
申请号 |
KR20100023914 |
申请日期 |
2010.03.17 |
申请人 |
TOKYO ELECTRON LIMITED;TOHOKU UNIVERSITY;ARACA INCORPORATION |
发明人 |
NEMOTO TAKENAO;OHMI TADAHIRO;TERAMOTO AKINOBU;SHUN GU;PHILIPOSSIAN ARA;SAMPURNO YASA |
分类号 |
H01L21/304;B24B37/00;B24B37/10 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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