发明名称 METHOD OF CHEMICAL MECHANICAL POLISHING
摘要 PURPOSE: A chemical and mechanical polishing method is provided to protect a wafer material or an under-layer film from being damaged by reducing shear stress applied to a semiconductor. CONSTITUTION: A semiconductor wafer(10) rotates the same direction as the rotation direction of a carrier(34). A polishing pad(30) is attached on a rotary table(32). The diameter of the rotary table is larger than that of the semiconductor wafer. A backing film detachably fixes the semiconductor wafer to the carrier. The rotary speed ratio of the semiconductor wafer and the polishing pad is more than or equal to 2:1.
申请公布号 KR20100105823(A) 申请公布日期 2010.09.30
申请号 KR20100023914 申请日期 2010.03.17
申请人 TOKYO ELECTRON LIMITED;TOHOKU UNIVERSITY;ARACA INCORPORATION 发明人 NEMOTO TAKENAO;OHMI TADAHIRO;TERAMOTO AKINOBU;SHUN GU;PHILIPOSSIAN ARA;SAMPURNO YASA
分类号 H01L21/304;B24B37/00;B24B37/10 主分类号 H01L21/304
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