NONVOLATILE SEMICONDUCTOR MEMORY DEVICE, AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device which controls consumption power while effectively controlling the generation of incorrect set operation at the time of set operation and which is highly reliable, and to provide a method of manufacturing the same.

SOLUTION: A rectifier element layer 21 includes: a semiconductor layer 24; an electrode layer 23 provided on one end side of the semiconductor layer 24; an electrode layer 26 provided on the other end side of the semiconductor layer 24; and an electrode layer 25 provided between the electrode layer 26 and the semiconductor layer 24. The semiconductor layer 24 includes a p+ type semiconductor layer 24c and an n+ type semiconductor layer 24a. The electrode layer 25 is constituted of a material lattice matched to the semiconductor layers 24. The semiconductor layer 24 has a structure which is crystal-grown starting from the electrode layer 25 as crystal nuclei thereof.

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