| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device having high integration. SOLUTION: In this nonvolatile semiconductor storage device 1, a laminated body with a plurality of insulation films and a plurality of electrode films respectively alternately laminated therein is formed; a plurality of upper selection gate electrodes USG extending in the X-direction are formed on the laminated body; silicon pillars SP penetrating the laminated body and the upper selection gate electrodes USG are formed; and charge storage films are formed between the electrode films and the silicon pillars SP. The plurality of silicon pillars SP penetrating a common upper selection gate electrode USL penetrate alternately, generally along the X-direction, one sides and the other sides in the width direction of the upper selection gate electrodes USG, and the plurality of silicon pillars SP arranged along the Y-direction penetrate the sides identical to one another in the width direction of the upper selection gate electrodes USG. Thereby, the two silicon pillars SP penetrating the common upper selection gate electrode USL and adjacent to each other have different positions in the width direction of the upper selection gate electrode USG. COPYRIGHT: (C)2010,JPO&INPIT |
