| 摘要 |
PROBLEM TO BE SOLVED: To achieve a method for transferring monocrystalline thin layers from a first monocrystalline substrate onto a second substrate with a reduced requirement with respect to the hydrogen dose needed for layer splitting. SOLUTION: The method for transferring monocrystalline thin layers from the first monocrystalline substrate onto the second substrate carries out co-implantation of hydrogen-trap inducing ions with hydrogen ions, the high temperature implantation of hydrogen, and their combination. Then, heat-treatment is applied to weaken the connection between the implanted layer and the rest of the first substrate. Moreover, a strong bond is formed between the implanted first substrate and the second substrate. Finally, another heat-treatment is applied to split the monocrystalline thin layer from the rest of the first substrate by forming and growing hydrogen filled microcracks. COPYRIGHT: (C)2010,JPO&INPIT
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