发明名称 |
VAPORIZER, SUBSTRATE TREATMENT DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To uniformly form a passage width of a carrier gas ejection part throughout the carrier gas ejection part. SOLUTION: The vaporizer includes: a vaporizing chamber for vaporizing a liquid material; a heater for heating the inside of the vaporizing chamber; a spray nozzle for spraying the liquid material into the vaporizing chamber; and a member for forming a carrier gas ejection part, which covers a portion of a surface of a tip part of the spray nozzle to form a carrier gas ejection part for spraying a carrier gas into the vaporizing chamber from a periphery of the tip part of the spray nozzle. A through-hole for housing the tip part of the spray nozzle therein is formed on the member for forming a carrier gas ejection part, and a plurality of projecting parts in contact with the tip part of the spray nozzle are formed at a plurality of parts on an inner wall surface of the through-hole. COPYRIGHT: (C)2010,JPO&INPIT
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申请公布号 |
JP2010219421(A) |
申请公布日期 |
2010.09.30 |
申请号 |
JP20090066442 |
申请日期 |
2009.03.18 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
FUKUDA MASANAO;MORIMITSU KAZUHIRO;HORII SADAYOSHI |
分类号 |
H01L21/31;C23C16/448 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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