发明名称 VAPORIZER, SUBSTRATE TREATMENT DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To uniformly form a passage width of a carrier gas ejection part throughout the carrier gas ejection part. SOLUTION: The vaporizer includes: a vaporizing chamber for vaporizing a liquid material; a heater for heating the inside of the vaporizing chamber; a spray nozzle for spraying the liquid material into the vaporizing chamber; and a member for forming a carrier gas ejection part, which covers a portion of a surface of a tip part of the spray nozzle to form a carrier gas ejection part for spraying a carrier gas into the vaporizing chamber from a periphery of the tip part of the spray nozzle. A through-hole for housing the tip part of the spray nozzle therein is formed on the member for forming a carrier gas ejection part, and a plurality of projecting parts in contact with the tip part of the spray nozzle are formed at a plurality of parts on an inner wall surface of the through-hole. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010219421(A) 申请公布日期 2010.09.30
申请号 JP20090066442 申请日期 2009.03.18
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 FUKUDA MASANAO;MORIMITSU KAZUHIRO;HORII SADAYOSHI
分类号 H01L21/31;C23C16/448 主分类号 H01L21/31
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