| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing an oxide semiconductor thin film with high mobility which can form a film in a low-temperature process, and can reduce impurity scattering. SOLUTION: In the method of manufacturing the semiconductor thin film, the oxide semiconductor thin film containing indium oxide (In2O3) or tin oxide (SnO2) containing a copper element (Cu) is formed at a substrate temperature 500°C or lower by using a sputtering target in which an atom ratio of the copper element satisfies an expression 0.001≤Cu/(Cu+X)≤0.1 (in the expression, X is In or Sn), and is subject to annealing treatment at 500°C or lower. COPYRIGHT: (C)2010,JPO&INPIT
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