发明名称 METHOD FOR PRODUCING HIGH-PURITY SILICON MATERIAL
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for producing a high-purity silicon material, in which a carbothermal reduction method is utilized in a process for reducing silicon dioxide to silicon. Ž<P>SOLUTION: The method for producing the silicon material comprises the following steps of: selecting high purity quartz ores as a raw material; cleaning and comminuting the quartz ores; choosing accurately the particle size of the quartz ores between 20 mm and 80 mm by an optical analyzer; purifying the quartz ores; melting the quartz ores at a high temperature in a metallurgical furnace; applying carbothermal reduction and post-refining to the quartz ores and a pure carbon reducing agent so as to obtain liquid silicon; pouring the liquid silicon into a ladle through a valve of the metallurgical furnace; removing impurities of the liquid silicon in the ladle by moist reduction through gas blowing and slag treating; pouring the liquid silicon into a casting area of a crystal growth furnace; and solidifying the liquid silicon in the casting area by a directional solidification method so as to obtain a solid silicon material. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010215485(A) 申请公布日期 2010.09.30
申请号 JP20090128850 申请日期 2009.05.28
申请人 PADIANT TECHNOLOGY CO 发明人 CHOU HSIEN-CHUNG
分类号 C01B33/023;C01B33/037 主分类号 C01B33/023
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