发明名称 |
Memory device using a variable resistive element |
摘要 |
A memory device includes a memory cell array including a plurality of memory blocks, each memory block including a plurality of memory cells, a plurality of word lines coupled to rows of the plurality of memory cells, a plurality of bit lines coupled to columns of the plurality of memory cells, and a control unit controlling an erase operation so that erase data is simultaneously written in the plurality of memory cells corresponding to an erase unit. A first erase mode may include a first erase unit and a first erase data pattern. A second erase mode may include a second erase unit and a second erase pattern. At least one of the first and second erase units and the first and second erase data patterns are different.
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申请公布号 |
US2010246239(A1) |
申请公布日期 |
2010.09.30 |
申请号 |
US20100659840 |
申请日期 |
2010.03.23 |
申请人 |
LEE KWANG-JIN;LEE CHANG-SOO;PARK JOON-MIN;SEO HUI-KWON;WANG QI |
发明人 |
LEE KWANG-JIN;LEE CHANG-SOO;PARK JOON-MIN;SEO HUI-KWON;WANG QI |
分类号 |
G11C11/00;G11C7/00;G11C8/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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