发明名称 |
DEPOSITION OF HIGH VAPOR PRESSURE MATERIALS |
摘要 |
The present invention provides deposition sources, systems, and related methods that can efficiently and controllably provide vaporized material for deposition of thin-film materials. The deposition sources, systems and related methods described herein can be used to deposit any desired material and are particularly useful for depositing high vapor pressure materials such as selenium in the manufacture of copper indium gallium diselenide based photovoltaic devices. |
申请公布号 |
WO2010110871(A2) |
申请公布日期 |
2010.09.30 |
申请号 |
WO2010US00855 |
申请日期 |
2010.03.24 |
申请人 |
VEECO INSTRUMENTS INC.;PRIDDY, SCOTT WAYNE;CONROY, CHAD MICHAEL |
发明人 |
PRIDDY, SCOTT WAYNE;CONROY, CHAD MICHAEL |
分类号 |
H01L31/042 |
主分类号 |
H01L31/042 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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