发明名称 |
STRUCTURE AND FABRICATION OF LIKE-POLARITY FIELD-EFFECT TRANSISTORS HAVING DIFFERENT CONFIGURATIONS OF SOURCE/DRAIN EXTENSIONS, HALO POCKETS, AND GATE DIELECTRIC THICKNESSES |
摘要 |
<p>A group of high-performance like-polarity insulated-gate field-effect transistors (100, 108, 112, 116, 120, and 124 or 102, 110, 114, 118, 122, and 126) have selectably different configurations of lateral source/drain extensions, halo pockets, and gate dielectric thicknesses suitable for a semiconductor fabrication platform that provides a wide variety of transistors for analog and/or digital applications. Each transistor has a pair of source/drain zones, a gate dielectric layer, and a gate electrode. Each source/drain zone includes a main portion and a more lightly doped lateral extension. The lateral extension of one of the source/drain zones of one of the transistors is more heavily doped or/and extends less deeply below the upper semiconductor surface than the lateral extension of one of the source/drain zones of another of the transistors.</p> |
申请公布号 |
WO2010110902(A1) |
申请公布日期 |
2010.09.30 |
申请号 |
WO2010US00898 |
申请日期 |
2010.03.25 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
BULUCEA, CONSTANTIN;FRENCH, WILLIAM D.;ARCHER, DONALD M.;YANG, JENG-JIUN;BAHL, SANDEEP R.;PARKER, D. COURTNEY |
分类号 |
H01L21/70;H01L29/02;H01L29/10 |
主分类号 |
H01L21/70 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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