| 摘要 |
<p>A semiconductor structure contains a bipolar transistor (101) and a spacing structure (265-1 or 265-2). The transistor has an emitter (241), a base (243), and a collector (245). The base includes a base contact portion (243C-1), an intrinsic base portion (2431-1) situated below the emitter and above material of the collector, and a base link portion (243 L-I) extending between the intrinsic base and base contact portions. The spacing structure includes a spacing structure and an isolating dielectric layer (267-1 or 267-2) extending along the upper semiconductor surface. The spacing component includes a lateral spacing portion (269-1 or 269-2) of largely non-monocrystalline semiconductor material, preferably polycrystalline semiconductor material, situated on the dielectric layer above the base link portion. Opposite first and second lower edges (305-1 and 307-1) of the lateral spacing portion laterally conform to opposite first and second upper edges (297-1 and 299-1) of the base link portion so as to determine, and thereby control, its length.</p> |
