发明名称 |
SILICON WAFER AND METHOD OF MANUFACTURING SAME |
摘要 |
<p>A method of manufacturing a silicon wafer has a wafer preparation process for performing a surface treatment of a silicon wafer, a stress setting process for setting a stress to be imposed on the wafer, an inspection process for inspecting flaws on a wafer surface, and a determination process for determining if the wafer satisfies the criterion. By the method, it is possible to manufacture a wafer having the fracture resistance to even millisecond annealing performed in an FLA (Flash Lamp Annealing) process.</p> |
申请公布号 |
WO2010109853(A1) |
申请公布日期 |
2010.09.30 |
申请号 |
WO2010JP02060 |
申请日期 |
2010.03.24 |
申请人 |
SUMCO CORPORATION;ONO, TOSHIAKI;KIHARA, TAKAYUKI;HOSHINO, YUMI |
发明人 |
ONO, TOSHIAKI;KIHARA, TAKAYUKI;HOSHINO, YUMI |
分类号 |
C30B33/02;C30B29/06;H01L21/265 |
主分类号 |
C30B33/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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