发明名称 SILICON WAFER AND METHOD OF MANUFACTURING SAME
摘要 <p>A method of manufacturing a silicon wafer has a wafer preparation process for performing a surface treatment of a silicon wafer, a stress setting process for setting a stress to be imposed on the wafer, an inspection process for inspecting flaws on a wafer surface, and a determination process for determining if the wafer satisfies the criterion. By the method, it is possible to manufacture a wafer having the fracture resistance to even millisecond annealing performed in an FLA (Flash Lamp Annealing) process.</p>
申请公布号 WO2010109853(A1) 申请公布日期 2010.09.30
申请号 WO2010JP02060 申请日期 2010.03.24
申请人 SUMCO CORPORATION;ONO, TOSHIAKI;KIHARA, TAKAYUKI;HOSHINO, YUMI 发明人 ONO, TOSHIAKI;KIHARA, TAKAYUKI;HOSHINO, YUMI
分类号 C30B33/02;C30B29/06;H01L21/265 主分类号 C30B33/02
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