| 摘要 |
<p>PURPOSE: By using the heater locating in the opposite side after evaporating the selenium by using the proximity distance sublimation method, CIGS thin film type production of solar battery apparatus using R T S heats substrate with the high temperature. CONSTITUTION: A board heating heater(120) locates inside the vacuum chamber(110). The board heating heater is heated by the power provided from outside. In the state where the substrate(130) is separated as the board heating heater and prescribed distance, it is settled in the settling portion. The proximity distance evaporation source(140) is included in the substrate backside.</p> |
