SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve the performance of the semiconductor device by forming a capacitor with high capacitance. CONSTITUTION: A semiconductor device includes bottom electrodes, a first support member pattern(155), and a dielectric layer(145). The bottom electrodes are arranged in a second direction which is vertical to a first direction. The first support member pattern is higher than the upper side of the bottom electrode and connects the adjacent bottom electrodes. A dielectric layer is formed on the bottom electrodes and the first support member pattern.
申请公布号
KR20100104287(A)
申请公布日期
2010.09.29
申请号
KR20090022605
申请日期
2009.03.17
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
KIM, JONG KYU;JEONG, SANG SUP;CHOI, SUNG GIL;PARK, HEUNG SIK;YOON, KUK HAN;CHOI, YONG JOON