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发明名称
FABRICATION PROCESS FOR INCREASED CAPACITANCE IN AN EMBEDDED DRAM MEMORY
摘要
申请公布号
EP1844496(A4)
申请公布日期
2010.09.29
申请号
EP20060734187
申请日期
2006.02.02
申请人
MOSYS, INC.
发明人
SINITSKY, DENNIS;HSU, FU-CHIEH
分类号
H01L21/8242;H01L27/108
主分类号
H01L21/8242
代理机构
代理人
主权项
地址
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