Method for manufacturing a memory device with conductive nanoparticles

摘要

The method comprises producing source and drain regions (11, 120) in a substrate using a semiconductor and a first dielectric (241) on a substrate zone disposed between the source and drain regions to form a channel (121) of a memory device, depositing an ionic liquid comprising the nanoparticles made of an electrically conductive material in the substrate to seal the dielectric material, depositing the nanoparticles on the first dielectric, retreating the ionic liquid, and producing a second dielectric and a control grid on a part of the nanoparticles deposition. The method comprises producing source and drain regions (11, 120) in a substrate using a semiconductor and a first dielectric (241) on a substrate zone disposed between the source and drain regions to form a channel (121) of a memory device, depositing an ionic liquid comprising the nanoparticles made of an electrically conductive material in the substrate to seal the dielectric material, depositing the nanoparticles on the first dielectric, retreating the ionic liquid, and producing a second dielectric and a control grid on a part of the nanoparticles deposition. The production of source and drain regions is carried out by producing an artificial grid on the substrate, and implanting dopants in the substrate using the artificial grid as an implantation mask. The doped zones of the substrates form drain and source regions. Spacers (114, 116) are produced based on the dielectric material against side flanks of the artificial grid. A coating layer is deposited on the artificial grid, the spacers and the source and drain regions, and is planarized with a block on the grid. A part of the spacers is etched in contact with the substrate, where two openings are formed on remaining part of the spacers. The ionic liquid is equally deposited in the openings at the level of the substrate zones. The source and rain regions are siliconized. The deposition of the nanoparticles is carried out by incubation of the substrate and the ionic liquid for 5 minutes to 1 hour. A non-zero electrical potential difference is applied between the substrate and the ionic liquid and between source and drain regions and ionic liquid during the deposition of nanoparticles. The removal of the ionic liquid comprises rinsing the liquid with a solvent and drying or degrading the liquid by heat treatment at 200-500[deg] C. The second dielectric and the control grid is carried out by depositing a layer based on the dielectric material on the deposited nanoparticles, depositing a layer based on the electrically conductive material on the dielectric layer, and planarizing the electrically conductive layer and the dielectric layer. The ionic liquid is deposited by centrifugation or projection.