发明名称 PROCESS OF TREATING DEFECTS DURING THE BONDING OF WAFERS
摘要 <p>The invention concerns a process of preparing a thin layer to be transferred onto a substrate having a surface topology and, therefore, variations in altitude or level, in a direction perpendicular to a plane defined by the thin layer, this process comprising the formation on the thin layer of a layer of adhesive material, the thickness of which enables carrying out a plurality of polishing steps of its surface in order to eliminate any defect or void or almost any defect or void, in preparation for an assembly via a molecular kind of bonding with the substrate.</p>
申请公布号 EP2232534(A1) 申请公布日期 2010.09.29
申请号 EP20090702323 申请日期 2009.01.16
申请人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES 发明人 LAGAHE, CHRYSTELLE;ASPAR, BERNARD
分类号 H01L21/20;H01L21/66 主分类号 H01L21/20
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