发明名称 |
MAGNETIC MEMORY DEVICE USING PERPENDICULAR MAGNETIC ANISOTOPY |
摘要 |
<p>PURPOSE: A magnetic memory device is provided to improve magnetic domain moving efficiency by a current by maintaining vertical magnetism in a thick magnetic layer. CONSTITUTION: A magnetic memory device includes a non-magnetic layer(100a,100b), a first magnetic layer(110a,110b), and a second magnetic layer(120). A first magnetic layer is formed between nonmagnetic layers. A second magnetic layer is formed between the first magnetic layers. A saturated magnetization value of the second magnetic layer is below the saturated magnetization value of the first magnetic layer.</p> |
申请公布号 |
KR20100104413(A) |
申请公布日期 |
2010.09.29 |
申请号 |
KR20090022811 |
申请日期 |
2009.03.17 |
申请人 |
SNU R&DB FOUNDATION |
发明人 |
CHOE, SUG BONG;LEE, JAE CHUL;LEE, KANG SOO;KIM, KAB JIN |
分类号 |
G11C11/15;H01L27/115 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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