发明名称 MAGNETIC MEMORY DEVICE USING PERPENDICULAR MAGNETIC ANISOTOPY
摘要 <p>PURPOSE: A magnetic memory device is provided to improve magnetic domain moving efficiency by a current by maintaining vertical magnetism in a thick magnetic layer. CONSTITUTION: A magnetic memory device includes a non-magnetic layer(100a,100b), a first magnetic layer(110a,110b), and a second magnetic layer(120). A first magnetic layer is formed between nonmagnetic layers. A second magnetic layer is formed between the first magnetic layers. A saturated magnetization value of the second magnetic layer is below the saturated magnetization value of the first magnetic layer.</p>
申请公布号 KR20100104413(A) 申请公布日期 2010.09.29
申请号 KR20090022811 申请日期 2009.03.17
申请人 SNU R&DB FOUNDATION 发明人 CHOE, SUG BONG;LEE, JAE CHUL;LEE, KANG SOO;KIM, KAB JIN
分类号 G11C11/15;H01L27/115 主分类号 G11C11/15
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