SEMICONDUCTOR DEVICE WITH HAVE LOW RESISTANCE BURIED METAL GATE ELECTRODE STRUCTURE AND METHOD FOR MANUFACTURING SAME

摘要

PURPOSE: A semiconductor device with a low resistance buried metal gate structure and a forming method thereof are provided to minimize a unit cell by obtaining the semiconductor device with a high electric characteristic. CONSTITUTION: A semiconductor substrate(100) is divided into an active region and an inactive region by forming a device isolation layer. A recess hole is formed on the active region. A gate dielectric layer(120) is formed in the recess hole. A barrier metal layer is formed on the gate dielectric layer. A metal layer for forming a nucleus is formed on the barrier metal layer. The phase of the metal layer is changed to have a low resistance characteristic by thermally processing the metal layer for forming the nucleus. A bulk metal electrode is formed based on the metal layer for forming the phase changed metal layer for forming the nucleus.