METHOD OF SILICON SINGLE CRYSTAL-GROWTH WHEREIN POINT DEFECT CONCENTRATION IS CONTROLLED AND SILICON SINGLE CRYSTAL AND WAFER FABRICATED USING THE SAME

摘要

PURPOSE: A method for growing a silicon single crystal, and the silicon crystal and a substrate manufactured by the same are provided to uniformly form a vacancy type defect along a diameter direction of the silicon crystal. CONSTITUTION: In a method for growing a silicon single crystal from silicon solutions, a difference of a cooling speed(°C/cm) between the center and the edge of the silicon single crystal is 0.5 or less. A dwelling time at a temperature for growing a vacancy type defect is 1.7 hours or more.