发明名称 |
SEMICONDUCTOR FIELD EFFECT TRANSISTORS AND FABRICATION THEREOF |
摘要 |
PURPOSE: A semiconductor field effect transistor and a method for manufacturing the same are provided to improve the reliability and the performance of elements by doping a stabilization metal to stabilize a semiconductor oxide. CONSTITUTION: A semiconductor oxide layer is formed on a substrate(10). A metal oxide layer is formed on the semiconductor oxide layer. The semiconductor oxide layer and the metal oxide layer are converted into a first dielectric layer(23). A second dielectric layer(24) is formed on the first dielectric layer. A first gate electrode layer(25) is formed on the second dielectric layer. A second gate electrode layer(26) is formed on the first gate electrode layer. |
申请公布号 |
KR20100105462(A) |
申请公布日期 |
2010.09.29 |
申请号 |
KR20100023676 |
申请日期 |
2010.03.17 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIN JING CHENG |
分类号 |
H01L21/335 |
主分类号 |
H01L21/335 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|