METHOD OF FORMING PATTERNS FOR SEMICONDUCTOR DEVICE

摘要

PURPOSE: The pattern formation method of the semiconductor device omits the separate photo lithography process in the formation having the various width of the patterns. The manufacturing cost according to the simplicity of the process is reduced. CONSTITUTION: A dual mask layer(320) is formed on the substrate(300) having the first area and the second part. In the first area and the second part, the variable mask layer(330) is formed on the dual mask layer. The first photo resist pattern(340A) and the second photoresist pattern(340B) are formed on the variable mask layer.