| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to protect a chip from energy of a channel region applied by a laser when a substrate is separated. CONSTITUTION: An oxide film(105) with a first band gap is formed on a substrate(101) with a chip interval. A plurality of compound semiconductor layers with a second band gap is formed on the substrate. The second band gap is higher than the first band gap. A second electrode member is formed on the compound semiconductor. The substrate is separated by irradiating a laser on the substrate. The substrate is divided with a chip size.</p> |
