NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A first wire layer (19) including first memory wires (12) is connected to a second wire layer (20) including second memory wires (17) via first contacts (21) penetrating a first interlayer insulating layer (13). The first wire layer (13) is connected to and led out to upper wires (22) via second contacts (26) connected to the second wire layer (20) and penetrating the second interlayer insulating layer (18). The first contacts (21) penetrate semiconductor layer (17b) or insulator layer (17c) of the second wire layer (20).