发明名称 Plasma processing apparatus
摘要 <p>A plasma processing apparatus performs plasma processing on a processing target in a processing chamber. The apparatus includes: an object to be heated provided near a periphery of a mounting table (110a) disposed in the processing chamber; and a heating electrode (135) disposed adjacent to the periphery of the mounting table, for heating the object to be heated. A first coil (135a1) having a first path and a second coil (135a2) having a second path are wired close to each other in the heating electrode along the periphery of the mounting table.</p>
申请公布号 EP2234140(A2) 申请公布日期 2010.09.29
申请号 EP20100157944 申请日期 2010.03.26
申请人 TOKYO ELECTRON LIMITED 发明人 YAMAWAKU, JUN;KOSHIMIZU, CHISHIO
分类号 H01J37/32 主分类号 H01J37/32
代理机构 代理人
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