发明名称 |
Plasma processing apparatus |
摘要 |
<p>A plasma processing apparatus performs plasma processing on a processing target in a processing chamber. The apparatus includes: an object to be heated provided near a periphery of a mounting table (110a) disposed in the processing chamber; and a heating electrode (135) disposed adjacent to the periphery of the mounting table, for heating the object to be heated. A first coil (135a1) having a first path and a second coil (135a2) having a second path are wired close to each other in the heating electrode along the periphery of the mounting table.</p> |
申请公布号 |
EP2234140(A2) |
申请公布日期 |
2010.09.29 |
申请号 |
EP20100157944 |
申请日期 |
2010.03.26 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
YAMAWAKU, JUN;KOSHIMIZU, CHISHIO |
分类号 |
H01J37/32 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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