发明名称 |
SEMICONDUCTOR DEVICE THERMAL CONNECTION |
摘要 |
A semiconductor device thermal connection used to remove heat from a semiconductor device, such as an integrated circuit, includes a metallic barrier layer on the semiconductor device, and a high thermal conductivity material on the metallic barrier layer that joins the semiconductor device to a thermal heat spreader. The metallic barrier layer may be one or more sputtered layers, and the high thermal conductivity material may be a metallic material, for instance including indium, that is soldered onto the sputtered material. The high thermal conductivity material may form a primary thermal connection in conducting heat away from the semiconductor device. A secondary thermal connection may be made between the heat spreader and a heat sink. The secondary thermal connection may include a compressible solid carbon fiber material. A diaphragm may be used to contain the carbon fiber material, to prevent carbon fibers from coming into contact with the semiconductor device. |
申请公布号 |
EP2232550(A1) |
申请公布日期 |
2010.09.29 |
申请号 |
EP20080859200 |
申请日期 |
2008.10.03 |
申请人 |
RAYTHEON COMPANY |
发明人 |
DRAKE, PETER;BOYACK, CHAD E.;PAULSON, KEVIN A.;FAORO, JAMES E.;NELSON KONEN, CYNTHIA R.;PETERSON, STEVEN N.;CUNNINGTON, GEORGE R.;MYERS, JAMES R. |
分类号 |
H01L23/373 |
主分类号 |
H01L23/373 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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