PURPOSE: The semiconductor memory device reduces the misalign generation between the contact. The resistivity fault between the contact, and the short failure and the not-open fault are prevented. CONSTITUTION: A word line having the first effective pitch(P1) is located on surface unit active areas. The bit line having the first effective pitch is located on surface word lines. The first pad contact(210) is arranged between word lines. The direct contact(212) each other electrically connects first pad contacts and bit line. The second pad contact(214) is arranged between word lines and bit lines.
申请公布号
KR20100105088(A)
申请公布日期
2010.09.29
申请号
KR20090023925
申请日期
2009.03.20
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
PARK, JAI KYUN;HONG, HYEONG SUN;LEE, JONG SEOP;KIM, YONG IL;LEE, YUN SUNG;KANG, NAM JUNG;SONG, JAE HOON;KIM, GIL SUB