发明名称 CAPACITOR COMPRISING HOLE STRUCTURE AND MANUFACTURING METHOD THEREOF
摘要 PURPOSE: A capacitor and a manufacturing method thereof are provided to implement a capacitor with high capacitance by increasing the area of the capacitor. CONSTITUTION: A capacitor(200) comprises a substrate(210), a bottom electrode(220), a dielectric layer(230) and an upper electrode(240). A plurality of penetration holes are formed on the substrate. The diameter of the penetration hole is 0.5 to 10 um. The bottom electrode is formed on the upper surface of the substrate and the inner surface of the penetration hole. The dielectric layer is formed on the bottom electrode. A top electrode is formed on the dielectric layer. The bottom electrode, the dielectric layer and the top electrode are formed with an ALD(Atomic Layer Deposition) method.
申请公布号 KR20100104734(A) 申请公布日期 2010.09.29
申请号 KR20090023350 申请日期 2009.03.19
申请人 SNU R&DB FOUNDATION 发明人 HWANG, CHEOL SEONG;KIM, KYUNG MIN;HAN, JUNG HWAN
分类号 H01G4/002;H01G4/232;H01G4/30 主分类号 H01G4/002
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