发明名称 |
CAPACITOR COMPRISING HOLE STRUCTURE AND MANUFACTURING METHOD THEREOF |
摘要 |
PURPOSE: A capacitor and a manufacturing method thereof are provided to implement a capacitor with high capacitance by increasing the area of the capacitor. CONSTITUTION: A capacitor(200) comprises a substrate(210), a bottom electrode(220), a dielectric layer(230) and an upper electrode(240). A plurality of penetration holes are formed on the substrate. The diameter of the penetration hole is 0.5 to 10 um. The bottom electrode is formed on the upper surface of the substrate and the inner surface of the penetration hole. The dielectric layer is formed on the bottom electrode. A top electrode is formed on the dielectric layer. The bottom electrode, the dielectric layer and the top electrode are formed with an ALD(Atomic Layer Deposition) method.
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申请公布号 |
KR20100104734(A) |
申请公布日期 |
2010.09.29 |
申请号 |
KR20090023350 |
申请日期 |
2009.03.19 |
申请人 |
SNU R&DB FOUNDATION |
发明人 |
HWANG, CHEOL SEONG;KIM, KYUNG MIN;HAN, JUNG HWAN |
分类号 |
H01G4/002;H01G4/232;H01G4/30 |
主分类号 |
H01G4/002 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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