发明名称 |
Phase change memory cell including a thermal protect bottom electrode and manufacturing methods |
摘要 |
Memory devices are described along with manufacturing methods. An embodiment of a memory device as described herein includes a bottom electrode, a thermal protect structure on the bottom electrode, and a multi-layer stack on the thermal protect structure. The thermal protect structure comprises a layer of thermal protect material, the thermal protect material having a thermal conductivity less than that of the bottom electrode material.
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申请公布号 |
US7804083(B2) |
申请公布日期 |
2010.09.28 |
申请号 |
US20070940164 |
申请日期 |
2007.11.14 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHEN SHIH-HUNG |
分类号 |
H01L47/00;H01L29/04;H01L31/036 |
主分类号 |
H01L47/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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