发明名称 Phase change memory cell including a thermal protect bottom electrode and manufacturing methods
摘要 Memory devices are described along with manufacturing methods. An embodiment of a memory device as described herein includes a bottom electrode, a thermal protect structure on the bottom electrode, and a multi-layer stack on the thermal protect structure. The thermal protect structure comprises a layer of thermal protect material, the thermal protect material having a thermal conductivity less than that of the bottom electrode material.
申请公布号 US7804083(B2) 申请公布日期 2010.09.28
申请号 US20070940164 申请日期 2007.11.14
申请人 MACRONIX INTERNATIONAL CO., LTD. 发明人 CHEN SHIH-HUNG
分类号 H01L47/00;H01L29/04;H01L31/036 主分类号 H01L47/00
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