发明名称 Aluminum nitride sintered body and semiconductor manufacturing apparatus member
摘要 The aluminum nitride sintered body includes at least europium, aluminum, and oxygen. It was found that a grain boundary phase having a peak having a X-ray diffraction profile substantially the same as that of an Sr3Al2O6 phase could be three-dimensionally continued in the aluminum nitride sintered body to realize a lower resistance without damaging various properties unique to aluminum nitride.
申请公布号 US7803733(B2) 申请公布日期 2010.09.28
申请号 US20080054715 申请日期 2008.03.25
申请人 NGK INSULATORS, LTD. 发明人 TERATANI NAOMI;KATSUDA YUJI
分类号 C04B35/581 主分类号 C04B35/581
代理机构 代理人
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