| 摘要 |
In some embodiments, a memory integrated circuit has different shallow trench isolation structures in the memory circuitry of the memory integrated circuit and the control circuitry of the memory integrated circuit. The isolation dielectric fills the trenches of the shallow trench isolation structures to different degrees. In some embodiments, a memory integrated circuit has memory circuitry with shallow trench isolation structures and intermediate regions. The memory circuitry supports a channel between neighboring nonvolatile memory devices supporting multiple current components with different orientations. In some embodiments, recessed shallow trench isolation structures are formed.
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