| 摘要 |
<p>In a particular illustrative embodiment, a method of forming a magnetic tunnel junction (MTJ) device is disclosed that includes forming a trench (1514) in a substrate (1400). The method further includes depositing a magnetic tunnel junction (MTJ) structure (1516) within the trench. The MTJ structure includes a bottom electrode (1518), a fixed layer, a tunnel barrier layer, a free layer, and a top electrode (1522). The method also includes planarizing the MTJ structure. In a particular example, the MTJ structure is planarized using a Chemical Mechanical Planarization (CMP) process.</p> |
