| 摘要 |
The invention relates to accessing contents of memory cells. Some embodiments include a memory structure that has a first cell, a second cell, and a sense amplifier. The first cell stores a first value. The first and second cells are connected to the sense amplifier by one or more bit lines. The sense amplifier receives the first value stored by the first cell by using the one or more bit lines and drives the received first value to the second cell through the one or more bit lines. The receiving and driving occur in a single clock cycle. In some embodiments, the second cell outputs the first value. The memory structure of some embodiments also includes a third cell connected to the sense amplifier by the one or more bit lines. The sense amplifier drives a second value to the third cell while the second cell outputs the first value. Other embodiments include a method for accessing data in a memory structure. The method receives a value stored by a first cell; and drives the received value to a second cell. The receiving and driving occur in a single time period. In some embodiments, the method also includes driving a first value to the second cell in a first time period and driving a second value to a third cell in a second time period. In these embodiments, the second cell outputs the first value during the second time period and the third cell outputs the second value during a third time period.
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