发明名称 Millimeter wave monolithic integrated circuits
摘要 A millimeter wave amplifier constructed on a substrate and configured for use at a frequency of 75 GHz or higher, may include four amplifier stages. A first inter-stage filter, resonant at an operating frequency of the amplifier, may couple the output of the first stage to the input of the second stage. A second inter-stage filter, resonant at the operating frequency, may couple the output of the second stage to the input of the third stage. A third inter-stage filter, resonant at the operating frequency, may couple the output of the third stage to the input of the fourth stage. A plurality of bias supply leads that couple a gate bias voltage and a drain bias voltage to each of the amplifier stages. A plurality of bias line filters, resonant at the operating frequency, may be connected from at least some of the bias supply leads to a ground plane.
申请公布号 US7804366(B2) 申请公布日期 2010.09.28
申请号 US20090575389 申请日期 2009.10.07
申请人 RAYTHEON COMPANY 发明人 BROWN KENNETH W.;BROWN ANDREW K.
分类号 H03F3/04 主分类号 H03F3/04
代理机构 代理人
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