发明名称 Electrostatic discharge protection circuit
摘要 An electrostatic discharge protection circuit has a substrate; a first P-well installed on the substrate and having a first P+-doped region and a first N+-doped region, both of which are connected to ground; a second P-well installed on the substrate and having a second P+-doped region and a second N+-doped region, both of which are connected to a power supply voltage; and a third P-well installed on the substrate and having a third N+-doped region, a third P+-doped region, and a fourth N+-doped region, all of which are for input/output signals.
申请公布号 US7804671(B2) 申请公布日期 2010.09.28
申请号 US20070937487 申请日期 2007.11.08
申请人 VIA TECHNOLOGIES INC. 发明人 CHENG BOB;HO TONY;SZE BOURYI
分类号 H02H1/00;H01L23/60;H01L23/62;H02H9/00 主分类号 H02H1/00
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