发明名称 PMC memory with improved retention time and writing speed
摘要 A PMC memory including: a memory cell, the memory cell including, an active zone, a heating element disposed outside of the active zone, and at least two contacts that apply a writing voltage to the memory cell, wherein the heating element transitionally heats the memory cell-during a writing process in the memory cell to a writing temperature higher than an operating temperature of the memory cell outside the writing process.
申请公布号 US7804704(B2) 申请公布日期 2010.09.28
申请号 US20050722761 申请日期 2005.12.20
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE 发明人 SOUSA VERONIQUE
分类号 G11C11/00 主分类号 G11C11/00
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