发明名称 Multilevel imprint lithography
摘要 A mold with a protruding pattern is provided that is pressed into a thin polymer film via an imprinting process. Controlled connections between nanowires and microwires and other lithographically-made elements of electronic circuitry are provided. An imprint stamp is configured to form arrays of approximately parallel nanowires which have (1) micro dimensions in the X direction, (2) nano dimensions and nano spacing in the Y direction, and three or more distinct heights in the Z direction. The stamp thus formed can be used to connect specific individual nanowires to specific microscopic regions of microscopic wires or pads. The protruding pattern in the mold creates recesses in the thin polymer film, so the polymer layer acquires the reverse of the pattern on the mold. After the mold is removed, the film is processed such that the polymer pattern can be transferred on a metal/semiconductor pattern on the substrate.
申请公布号 US7803712(B2) 申请公布日期 2010.09.28
申请号 US20060636264 申请日期 2006.12.07
申请人 HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. 发明人 KORNILOVICH PAVEL;CHEN YONG;STEWART DUNCAN;WILLIAMS R. STANLEY;KUEKES PHILIP J.;YANIK MEHMET FATIH
分类号 B82B3/00;H01L21/308;B81C1/00;G03F7/00;H01L21/027;H01L21/3205;H01L21/768 主分类号 B82B3/00
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