发明名称 VARIABLE BAND PASS FILTER AND CONFIGURING METHOD THEREFOR
摘要 PURPOSE: A variable bandwidth pass active filter and a configuration method thereof are provided to reduce insertion loss by using a ferroelectric thin film material. CONSTITUTION: A variable bandwidth pass active filter comprises a high dielectric capacitor. The high dielectric capacitor comprises a silicon substrate(101), a barium strontium titanate thin film(105), and a titanium dioxide buffer layer(103). The barium strontium titanate thin film is formed on the titanium dioxide buffer layer. The titanium dioxide buffer layer is formed on the silicon substrate. The thickness of the silicon substrate is 500um. The thickness of the titanium dioxide buffer layer is 50nm. The thickness of the barium strontium titanate thin film is 0.1 to 1um.
申请公布号 KR100984075(B1) 申请公布日期 2010.09.28
申请号 KR20090096319 申请日期 2009.10.09
申请人 SAMSUNG THALES CO., LTD. 发明人 KIM, KIB YOUNG
分类号 H01P1/20;H01P7/10 主分类号 H01P1/20
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