SEMICONDUCTOR INTERGRATED CIRCUIT DEVICE FORMED BY USING THE PRINTING METHOD AND FABRICATION METHOD THEREOF

摘要

PURPOSE: A semiconductor integrated circuit device and a manufacturing method thereof are provided to form a source/drain region which is formed in both side walls of a nano semiconductor type material. CONSTITUTION: A semiconductor integrated circuit device includes a gate(210), a gate insulating layer(220), a nano semiconductor type material(230), and a source/drain region(250). The gate is formed on a substrate. The gate insulating layer is formed on the gate. The nano semiconductor type material is formed in the partial region on the gate insulating layer. The source/drain region is formed on the side wall of the nano semiconductor type material and is separated with the nano semiconductor type material.