发明名称 SEMICONDUCTOR MEMORY ARRARATUS
摘要 PURPOSE: A semiconductor memory device is the number of signal line for transmitting the signal, for controlling the connection of the line and bit line or separations can be reduced. The signal line layout is simplified. The layout margin can be multiplied. CONSTITUTION: A semiconductor memory device comprises the row route activation part(300) and cell array circuit part(400). According to the row route activation part is the address and active command, the line connection control signal is created. The cell array circuit part is composed in order to control the input-output line switch and bit line switch.
申请公布号 KR20100102878(A) 申请公布日期 2010.09.27
申请号 KR20090021162 申请日期 2009.03.12
申请人 HYNIX SEMICONDUCTOR INC. 发明人 YUN, TAE SIK;LEE, KANG SEOL
分类号 H01L21/8242 主分类号 H01L21/8242
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