发明名称 DEFECTIVE CELL DETECTING METHOD AND CIRCUIT FOR USE IN SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: A defective cell detection method and a defective cell detection circuit for a semiconductor memory device are detect the location of defective cells by selecting each bit from read test data from a memory core and outputting the selected bit to an output pad. CONSTITUTION: A memory core(12) is connected with a sense amplifying circuit(13). The sense amplifying circuit is connected with a single bit data outputting unit(14) through a first switching unit(S1). The single bit data outputting unit is connected with an output pad(15) through a switching unit(S2). An internal circuit controller(11) transmits a control signal to an internal configuration circuit and controls the internal configuration circuit.
申请公布号 KR20100102958(A) 申请公布日期 2010.09.27
申请号 KR20090021294 申请日期 2009.03.12
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HWANG, DOO HEE;KANG, PIL SUNG;NAM, KYUNG AH;NAM, TACK SUN;YI, CHUL WOO
分类号 G11C29/00;G11C7/10 主分类号 G11C29/00
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