SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE

摘要

PURPOSE: A semiconductor device and a method for manufacturing the same are provided to obtain an thin film transistor with the superior electrical characteristic by heating an oxide semiconductor layer at temperature more than 300 degrees Celsius. CONSTITUTION: A gate electrode layer(401) is formed on a substrate(400) with an insulating surface. A gate insulating layer(403) is formed to cover the gate electrode layer. An oxide semiconductor layer(405) is formed on the gate insulating layer. The oxide semiconductor layer is heat at temperature more than 300 degrees Celsius. After the heating process, the oxide semiconductor layer has an amorphous structure.