FABRICATING METHOD OF EPI-WAFER AND WAFER FABRICATED BY THE SAME, AND IMAGE SENSOR FABRICATED BY USING THE SAME

摘要

PURPOSE: An epitaxial wafer manufacturing method and an epi wafer thereof, and an image sensor thereof are provided to form a high concentration boron layer inside a wafer. CONSTITUTION: A wafer which includes boron is provided by cutting a single crystal silicon ingot(S110). An oxide film is grown in the front and the rear surface of the wafer(S120). The wafer is heat-treated(S130). An insulating layer which is formed in one side of the wafer is removed(S140). One side of the wafer is calender-grinded(S150). An epitaxial layer is formed in the front side of the wafer(S160).