| 摘要 |
PURPOSE: A metal compound thin film, a manufacturing method thereof, and a method for manufacturing a semiconductor device including the same are provided to reduce a contact resistance on a boundary by including more metal carbides in a contact area with a substrate. CONSTITUTION: A first metal compound thin film(110) with a first amount of metal carbides is formed on a substrate(100). A second metal compound thin film(120) with a second amount of metal carbides is formed on the first metal compound thin film. The first amount of the metal carbides is smaller than the second amount of metal carbides.
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