method for manufacturing thin film transistors based on titanium oxides as active layer and structure thereof,申请号KR20090110180-传众专利搜索

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发明名称	method for manufacturing thin film transistors based on titanium oxides as active layer and structure thereof
摘要
申请公布号	KR100983544(B1)	申请公布日期	2010.09.27
申请号	KR20090110180	申请日期	2009.11.16
申请人		发明人
分类号	H01L29/786	主分类号	H01L29/786
代理机构		代理人
主权项
地址

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