| 发明名称 |
PROCESS FOR VARYING CHARACTERISTIC OF THIN FILM LAYER, AND SUBSTRATE FOR APPLYING SAME PROCESS THERETO |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a process for varying the characteristics of a thin film layer (1) formed on the surface of a support (2) for forming a substrate (3) utilized in each field of a micro-electronics, a nano-electronics, a micro-technology, and a nano-technology. <P>SOLUTION: The process comprises: forming at least one thin film layer (1) on a nano-structurized support (2) having one specified top surface; processing the nano-structurized support (2) having the one specified surface to generate inner distortion in the support; and generating a deformation of the support in a plane of at least the thin film layer, thereby changing the characteristics of the thin film layer by securing the corresponding deformation of the thin film layer. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
| 申请公布号 |
JP2010212705(A) |
申请公布日期 |
2010.09.24 |
| 申请号 |
JP20100094004 |
申请日期 |
2010.04.15 |
| 申请人 |
UNIV CLAUDE BERNARD LYON 1 |
发明人 |
MARTY OLIVIER;LYSENKO VOLODYMYR |
| 分类号 |
H01L21/205;B05D3/00;B32B15/00;B81C1/00;B82B3/00;C30B25/02;H01L21/20;H01L39/24;H01L41/18;H01L41/22;H01L41/332 |
主分类号 |
H01L21/205 |
| 代理机构 |
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