发明名称 METHOD OF MACHINING WAFER
摘要 PROBLEM TO BE SOLVED: To provide a method of machining a wafer with which a wafer can be easily handled even if its thickness is reduced, and a laminated device that can be formed without damage. SOLUTION: The method of machining the wafer includes: a backside grinding step of grinding into a predetermined thickness a backside, corresponding to a device area, of the wafer with which devices are formed over a plurality of areas partitioned by a plurality of streets arrayed in a lattice shape on a front surface of a substrate, and forming an annular reinforcing part along its outer circumference; a backside etching step of etching the ground backside of the wafer to protrude an electrode from the backside corresponding to the device area in the substrate; a resin layer-coating step of coating the backside, corresponding to the device area in the substrate, of the wafer with a resin layer to embed the electrode protruded from the backside corresponding to the device area in the substrate; and a resin layer turning step of turning the resin layer coating the backside, corresponding to the device area in the substrate, of the wafer to expose an end face of the electrode. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010212608(A) 申请公布日期 2010.09.24
申请号 JP20090059750 申请日期 2009.03.12
申请人 DISCO ABRASIVE SYST LTD 发明人 KIMURA YUSUKE
分类号 H01L21/304;B24B1/00;H01L21/301 主分类号 H01L21/304
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