| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a DTI structure for improved breakdown strength against substrate, the semiconductor device achieving chip shrink. <P>SOLUTION: The semiconductor device includes, for example, a P-type substrate 1, an N-type EPI layer 2 formed on the substrate 1, an N-type first embedded layer (embedded layer 3) formed across the substrate 1 and the EPI layer 2, an N-type second embedded layer (embedded layer 12) which is formed under the first embedded layer and has an impurity concentration lower than the embedded layer 3, and a DTI 4 which reaches the interior of the substrate 1 from the surface of the EPI layer 2 by penetrating the embedded layer 12 and the embedded layer 3. <P>COPYRIGHT: (C)2010,JPO&INPIT |
