| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for pulling a silicon single crystal which improves nonuniformity of BMD (Bulk Micro Defect) density per parts, while the concentration of oxygen from the top side to the bottom side is uniformly maintained in the pulling process of a single crystal. Ž<P>SOLUTION: The method for pulling a silicon single crystal has a process for pulling a single crystal from a molten liquid in a crucible by a Czochralski method, a process for after-heating the pulled-up single crystal and a process for pulling up the after-heated single crystal into the pull chamber, where an oxygen precipitate nucleus forming temperature range is obtained beforehand by temperature measurement in the pulling furnace or simulation, and in the after-heating process, after-heating is carried out by controlling the pulling up speed of the single crystal so as to make the residence time in the oxygen precipitate nucleus forming temperature range at the bottom side of the single crystal within a range of 1/8-1/4 of the residence time in the oxygen precipitate nucleus forming temperature range at the top side of the single crystal. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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